Electronic Component With P-Doped Organic Semiconductor
AssigneeCommissariat a l'Energie Atomique
InventorsMohamed Ben Khalifa, David Vaufrey
Life of this patent
Estimating the term…
Abstract
An electronic component comprising a layer of organic semiconducting material in which a dopant is dispersed having an energy difference between the work function of the dopant and of the HOMO level of said organic semiconducting material that is less than 0.5 eV. The dopant is an atomic element having an evaporation temperature lower than 1300° C. for a pressure of 10−8 Torr. The invention enables the toxicity problems connected with usual organic acceptor dopants to be avoided. It applies in particular to organic light-emitting diodes.
Claims7
An electronic component comprising a layer of organic semiconducting material in which a dopant is dispersed having an energy difference between the work function of the dopant and of the HOMO level of said organic semi-conducting material that is less than 0.5 eV,
- wherein said dopant is an atomic element having an evaporation temperature of less than 1300° C. at a pressure of 10−8 Torr.
Dependencies are inferred from the claim text.