Selective Formation of Boron-Containing Metal Cap Pre-layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui-Lin Chang, Yung-Cheng Lu, Syun-Ming Jang
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Abstract
An interconnect structure with improved reliability is provided. The interconnect structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metallic wiring in the dielectric layer; a pre-layer over the metallic wiring, wherein the pre-layer contains boron; and a metal cap over the pre-layer, wherein the metal cap contains tungsten, and wherein the pre-layer and the metal cap are formed of different materials.
Claims31
An integrated circuit structure comprising:
- a semiconductor substrate;
- a dielectric layer over the semiconductor substrate;
- a metallic wiring in the dielectric layer;
- a pre-layer over the metallic wiring, wherein the pre-layer contains boron;
- and
- a metal cap over the pre-layer, wherein the metal cap contains tungsten, and wherein the pre-layer and the metal cap are formed of different materials.
An integrated circuit structure comprising:
- a substrate;
- a low-k dielectric layer over the substrate;
- an opening extending from a top surface of the low-k dielectric layer into the low-k dielectric layer;
- a barrier layer lining the opening;
- a copper-containing conductive line in the opening and on the barrier layer;
- a pre-layer over, and adjoining, the copper-containing conductive line, wherein the pre-layer comprises a material selected from the group consisting essentially of boron and boron nitride;
- and
- a tungsten cap over, and adjoining, the pre-layer.
A method for forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- forming a metallic wiring in the dielectric layer;
- forming a pre-layer over the metallic wiring, wherein the pre-layer comprises boron;
- and
- forming a metal cap over the pre-layer, wherein the metal cap comprises tungsten, and wherein the pre-layer and the metal cap are formed of different materials.
A method for forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate;
- forming a copper-containing line in the dielectric layer;
- performing a cleaning step using a cleaning gas comprising nitrogen and an element selected from the group consisting essentially of fluorine, chlorine, and combinations thereof, and
- forming a tungsten cap over the copper-containing line.
A method for forming an integrated circuit structure, the method comprising:
- providing a semiconductor substrate;
- forming a low-k dielectric layer over the semiconductor substrate;
- forming a copper-containing line in the low-k dielectric layer;
- and
- selectively forming a tungsten cap over the copper-containing line using precursors comprising WF6 and B2H6.
Dependencies are inferred from the claim text.