Semiconductor device
AssigneeInfineon Technologies AG
InventorsThorsten Meyer, Markus Brunnbauer, Recai Sezi
Life of this patent
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Abstract
A semiconductor device is disclosed. One embodiment includes a semiconductor substrate and at least two insulating elements located above the semiconductor substrate or above a mold compound embedding the semiconductor substrate. The at least two insulating elements have a first face facing the semiconductor substrate or the mold compound and a second face facing away from the semiconductor substrate or the mold compound. A conductive element for each of the at least two insulating elements extends from the first face of the insulating element to the second face of the insulating element.
Claims33
A semiconductor device comprising:
- a semiconductor substrate;
- at least two insulating elements located above the semiconductor substrate or above a mold compound embedding the semiconductor substrate, the at least two insulating elements having a first face facing the semiconductor substrate or the mold compound and a second face facing away from the semiconductor substrate or the mold compound;
- and
- a conductive element for each of the at least two insulating elements, the conductive elements extending from the first face of the insulating element to the second face of the insulating element.
A method comprising:
- providing a semiconductor substrate;
- applying an insulating layer above the semiconductor substrate;
- structuring the insulating layer to generate at least two insulating elements each having a down face and an up face;
- and
- applying a conductive element to each insulating element such that the conductive element extends from the down face to the up face of the insulating element.
A semiconductor device comprising:
- a semiconductor substrate;
- a cavity structure comprising side walls and a top wall arranged above the semiconductor substrate;
- and
- conductive lines extending from the semiconductor substrate to the top wall of the cavity structure.
A method comprising:
- providing a semiconductor substrate;
- applying an insulating layer above the semiconductor substrate;
- structuring the insulating layer to generate a cavity structure comprising side walls and a top wall;
- and
- generating a conductive line which is electrically connected to the semiconductor substrate and extends on the top wall of the cavity structure.
Dependencies are inferred from the claim text.