Back to results
US 2009/0014845 A1Published application
Film-forming composition
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsToshiro Morita, Isao Sato
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsToshiro Morita, Isao Sato
Estimating the term…
An SiO2-based film-forming composition giving a protective film which, after impurity diffusion, can be easily stripped off and which has a higher protective effect. The film-forming composition is one for forming a protective film which in the diffusion of an impurity into a silicon wafer, serves to partly prevent the impurity diffusion. This film-forming composition comprises a high-molecular silicon compound and a compound having a protective element which undergoes covalent bonding to the element to be diffused in the impurity diffusion and thereby comes to have eight valence electrons. The protective element is preferably gallium or aluminum when phosphorus is used as the element to be diffused, and is preferably tantalum, niobium, arsenic, or antimony when boron is used as the diffusion element.
A film-forming composition for constituting a protective film provided in diffusing a dopant into a silicon wafer, for partially preventing the diffusion of the dopant, the composition comprising a polymeric silicon compound, and a compound comprising a protective element which is to have eight valence electrons through covalently binding with an element to be a diffusion source used in diffusing the dopant.
Dependencies are inferred from the claim text.