Method for the production of crystalline silicon foils
AssigneeRGS Development B.V.
InventorAxel Georg Schonecker
Life of this patent
Estimating the term…
Abstract
The invention is a method for the production of a silicon foil with a targeted charge carrier transport to the p-n transition by means of an integral electric field (‘drift field’). By varying the crystal growth speed and introducing a doping substance into the fluid silicon beforehand, a crystallization process can be carried out in such a way that a gradient over the foil thickness is produced in the doping profile in the silicon. This gradient of the doping profile gives rise to an electric field. With the aid of various foil casting techniques foils that are suitable for the production of solar cells can thus be produced in a relatively simple manner.
Claims21
1-10. (canceled)
A method of producing a crystalline semiconductor foil with an integrated electric field, comprising:
- doping a fluid semiconductor with a doping substance having an equilibrium segregation coefficient k0, where k0<<1,
- drawing a foil from a melting crucible containing said fluid semiconductor in a production direction;
- and
- cooling said fluid semiconductor in such a way that a crystal growth speed varies in a direction essentially perpendicular to the production direction of the foil during crystal growth.
Dependencies are inferred from the claim text.