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US 2009/0014839 A1Published application
Nitride-Based Semiconductor Device
AssigneeRohm Co., Ltd.
InventorsMasayuki Sonobe, Norikazu Ito, Kazuaki Tsutsumi, Tetsuya Fujiwara
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Abstract
A nitride-based semiconductor device includes: an n-GaN layer 103; an active layer 104 formed on the n-GaN layer 103; a first AlGaN layer 105 formed on the active layer 104 at a growth temperature ranging from 900 to 1200° C. and by doping of Mg at a doping concentration ranging from 5×1019 to 2×1020/cm3; a second AlGaN layer 106 formed on the first AlGaN layer 105 at a growth temperature ranging from 900 to 1200° C.; and a p-GaN layer 107 formed on the second AlGaN layer 106.
Claims2
A nitride-based semiconductor device, comprising:
- a nitride-based semiconductor layer formed on a substrate and includes at least one layer;
- an active layer formed on the nitride-based semiconductor layer;
- a first AlGaN layer formed at a growth temperature ranging from 900 to 1200° C. and by a doping of Mg at a doping concentration ranging from 5×1019 to 2×1020/cm3;
- and
- a second AlGaN layer formed on the first AlGaN layer and formed at a growth temperature ranging from 900 to 1200° C.
2 more elements
Dependencies are inferred from the claim text.