Back to results
US 2009/0014837 A1Published application
Semiconductor device and method of manufacturing the same
AssigneePetari Incorporation
InventorYoung Jin PARK
Life of this patent
Estimating the term…
Abstract
The present invention relates to a semiconductor device and a method of manufacturing the same. A high-resistance silicon wafer is manufactured in such a manner that a large-sized silicon wafer manufactured by the Czochralski method is irradiated with neutrons, and high-resistance and low-resistance elements are simultaneously formed on the high-resistance silicon wafer. Thus, the manufacturing cost can be remarkably saved, and the reliability of products can be enhanced.
Claims21
A device comprising:
- a substrate;
- and
- a high-resistance element in a first region of the substrate and a low-resistance element in a second region of the substrate.
A semiconductor device comprising:
- a substrate having a first region, wherein the first region comprises an impurity ion implanted region;
- a low-resistance element on the first region;
- a wire on an interlayer dielectric layer, wherein the wire is connected to the low-resistance element through an interlayer dielectric layer;
- and
- a high-resistance element connected to a predetermined region of the wire.
2 more elements
A method of manufacturing a device comprising:
- ion-implanting an impurity in a first region of a substrate;
- forming a low-resistance element on the first region of the substrate;
- forming a first interlayer dielectric layer on the substrate over the low-resistance element;
- forming a contact hole in the first interlayer dielectric layer to expose a predetermined region of the low-resistance element;
- forming a first wire in the first interlayer dielectric layer, the first wire connected to the low-resistance element by the contact hole;
- forming second interlayer dielectric layer over the first interlayer dielectric layer;
- forming a via hole and a trench in the second interlayer dielectric layer, wherein the via hole exposes a predetermined region of the first wire and the trench comprises a predetermined shape;
- forming an inductor by forming a conductive layer to fill the via hole and the trench;
- and
- forming a high-resistance element connected to the inductor.
7 more elements
Dependencies are inferred from the claim text.