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US 2009/0014830 A1Published application
Method of manufacturing semiconductor device
OwnerMin-Hyung Lee, Oh-Jin Junginventors
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Abstract
A method of manufacturing a semiconductor device including at least one of the following steps: Forming an insulating film having at least one trench on and/or over a semiconductor substrate. Forming a metal film on and/or over a surface of an insulating film, including inside the trench. Forming a metal seed layer on and/or over the metal film inside the trench. Forming a metal plating layer on and/or over the metal seed layer to fill the trench.
Claims20
A method comprising:
- forming an insulating film over a semiconductor substrate;
- forming at least one trench in the insulating film;
- forming a metal film over the insulating film including inside said at least one trench;
- forming a metal seed layer over the metal film including inside said at least one trench;
- and
- forming a metal plating layer over the metal seed layer to fill said at least one trench.
3 more elements
A apparatus comprising:
- an insulating film formed over a semiconductor substrate;
- at least one trench formed in the insulating film;
- a metal film formed over the insulating film including inside said at least one trench;
- and
- a metal plating layer formed over the metal film fill said at least one trench.
2 more elements
The apparatus of claim it, comprising an anti-diffusion film formed over insulting film including inside said at least one trench.
Dependencies are inferred from the claim text.