A manufacturing method for a solid state imaging device in which a plurality of imaging pixels are arranged two-dimensionally along a main face of a semiconductor substrate with gaps between adjacent imaging pixels, comprising the steps of:
- forming a plurality of light receiving portions in one-to-one correspondence with the plurality of imaging pixels, each light receiving portion being operable to perform photoelectric conversion;
- forming a plurality of optical filters above the plurality of light receiving portions and in one-to-one correspondence with the plurality of imaging pixels;
- and
- forming a plurality of light blocking portions that are operable to block light, each being formed between a different pair of adjacent imaging pixels, on the main face of the semiconductor substrate to a height in a thickness direction of the semiconductor substrate that is greater than or substantially equal to top edges of the plurality of optical filters.