Semiconductor device and manufacturing method thereof
OwnerAkiko NOMACHIinventor
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, a first insulating film formed on a side surface of the gate electrode, a second insulating film covering a surface of the first insulating film and formed of a material different from a material of the first insulating film, and a third insulating film covering the semiconductor substrate, the gate electrode and the second insulating film and formed of a material different from the material of the second insulating film.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed on the semiconductor substrate;
- a gate electrode formed on the gate insulating film;
- a first insulating film formed on a side surface of the gate electrode;
- a second insulating film covering a surface of the first insulating film and formed of a material different from a material of the first insulating film;
- and
- a third insulating film covering the semiconductor substrate, the gate electrode and the second insulating film and formed of a material different from the material of the second insulating film.
A semiconductor device manufacturing method comprising:
- forming a structure which includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, a first insulating film formed on a side surface of the gate electrode, and a second insulating film covering a surface of the first insulating film and formed of a material different from a material of the first insulating film;
- forming a third insulating film covering the semiconductor substrate, the gate electrode and the second insulating film and formed of a material different from the material of the second insulating film;
- forming a fourth insulating film covering the third insulating film and formed of a material different from the material of the third insulating film;
- and
- forming a contact hole in the third insulating film and the fourth insulating film.
A semiconductor device manufacturing method comprising:
- forming a structure which includes a gate insulating film formed on a silicon substrate, a silicon film formed on the gate insulating film, a first silicon nitride film formed on an upper surface of the silicon film, and a second silicon nitride film formed on a side surface of the silicon film;
- converting a surface region of the silicon substrate which is not covered with said structure to a first silicide film;
- forming a first silicon oxide film on the first silicide film;
- removing the first silicon nitride film to expose the silicon film after forming the first silicon oxide film;
- converting the exposed silicon film to a second silicide film to form a gate electrode;
- removing the first silicon oxide film after forming the gate electrode;
- forming a second silicon oxide film covering a surface of the second silicon nitride film after removing the first silicon oxide film;
- forming a third silicon nitride film covering the first silicide film, the gate electrode and the second silicon oxide film;
- forming a third silicon oxide film covering the third silicon nitride film;
- forming a preliminary hole reaching the third silicon nitride film in the third silicon oxide film;
- and
- removing that part of the third silicon nitride film which is located under the preliminary hole to form a contact hole in the third silicon oxide film and the third silicon nitride film.
Dependencies are inferred from the claim text.