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US 2009/0014815 A1Published application
High voltage device and method for fabricating the same
AssigneeMagnaChip Semiconductor, Ltd.
InventorBo-Seok Oh
Life of this patent
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Abstract
A high voltage device includes drift regions formed in a substrate, an isolation layer formed in the substrate to isolate neighboring drift regions, wherein the isolation layer has a depth greater than that of the drift region, a gate electrode formed over the substrate, and source and drain regions formed in the drift regions on both sides of the gate electrode.
Claims19
A high voltage device, comprising:
- drift regions formed in a substrate;
- an isolation layer formed in the substrate to isolate neighboring drift regions, wherein the isolation layer has a depth greater than that of the drift region;
- a gate electrode formed over the substrate;
- and
- source and drain regions formed in the drift regions on both sides of the gate electrode.
2 more elements
A method for fabricating a high voltage device, the method comprising:
- forming an isolation layer in a substrate to define an active region;
- forming drift regions with a depth less than that of the isolation layer in a portion of the active region;
- forming a gate electrode over the active region;
- and
- forming source and drain regions in the drift regions on both sides of the gate electrode.
2 more elements
Dependencies are inferred from the claim text.