Power semiconductor device having improved performance and method

A semiconductor device, comprising:

• a semiconductor substrate;
• a semiconductor layer of a first conductivity type formed over the semiconductor substrate and having a major surface;
• a body region of a second conductivity type disposed in the semiconductor layer for forming a channel of the semiconductor device;
• a current conducting region of the first conductivity type formed in the body region;
• a gate structure formed over the major surface adjacent the channel;
• a first doped region of the second conductivity type formed in the semiconductor layer in proximity to the major surface and spaced apart from the body region;
• a first conductive layer coupled to the first doped region for controlling breakdown voltage of the semiconductor device when the semiconductor device is in operation.

A method for forming a semiconductor device, comprising the steps of:

• providing a substrate having a major surface, wherein the substrate comprises a first conductivity type;
• forming a pedestal structure on a portion of the major surface;
• forming a conductive material along a side surface of the pedestal structure to define an edge of a first conduction electrode of the semiconductor device;
• forming a first doped region of a second conductivity type in the major surface adjacent the first conduction electrode, wherein a portion of the first doped region forms a channel region when the semiconductor device is in operation;
• forming a current carrying region in the first doped region;
• forming a second doped region of the second conductivity type in the substrate in proximity to a drain edge of the channel region;
• and
• forming a first conductive layer coupled to the second doped region.