Metal Gates of PMOS Devices Having High Work Functions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDonald Y. Chao, Albert Chin, Ping-Fang Hung, Foug-Yu Yen, Kang-Cheng Lin, Kuo-Tai Huang
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Abstract
A semiconductor structure includes a refractory metal silicide layer; a silicon-rich refractory metal silicide layer on the refractory metal silicide layer; and a metal-rich refractory metal silicide layer on the silicon-rich refractory metal silicide layer. The refractory metal silicide layer, the silicon-rich refractory metal silicide layer and the metal-rich refractory metal silicide layer include same refractory metals. The semiconductor structure forms a portion of a gate electrode of a metal-oxide-semiconductor device.
Claims13
A semiconductor structure comprising:
- a substrate;
- a gate dielectric over the substrate;
- a refractory metal silicide layer over the gate dielectric;
- and
- a silicon-rich refractory metal silicide layer on the refractory metal silicide layer, wherein the refractory metal silicide layer and the silicon-rich refractory metal silicide layer comprises same refractory metals.
A semiconductor structure comprising:
- a substrate;
- a gate dielectric over the substrate;
- a laminated iridium silicide layer comprising:
- an iridium silicide layer over the gate dielectric;
- a silicon-rich iridium silicide layer on the iridium silicide layer;
- and
- an iridium-rich iridium silicide layer on the silicon-rich iridium silicide layer;
- a polysilicon layer over the iridium-rich iridium silicide layer;
- a gate spacer on sidewalls of the laminated iridium silicide layer and the polysilicon layer;
- and
- a source/drain region in the semiconductor substrate and adjacent the gate dielectric.
Dependencies are inferred from the claim text.