Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuyuki Sekine, Tomonori Aoyama, Takuya Kobayashi
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Abstract
A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.
A method for manufacturing a semiconductor device comprising, the semiconductor device comprising:
- a semiconductor substrate;
- a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide;
- and a first metal silicide gate electrode provided on the second gate dielectric film;
- the method comprising:
- forming the first gate dielectric film on the semiconductor substrate;
- forming a dielectric film including silicon and oxygen on the first gate dielectric film;
- forming a silicon film on the dielectric film;
- introducing aluminum into the silicon film;
- forming a refractory metal film on the silicon film;
- and
- heating the semiconductor substrate, the first gate dielectric film, the dielectric film, the silicon film, and the refractory metal film.
A method for manufacturing a semiconductor device comprising, the semiconductor device comprising:
- a semiconductor substrate;
- a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film;
- the method comprising:
- forming the first gate dielectric film on the semiconductor substrate;
- forming a silicon film on the first gate dielectric film;
- introducing aluminum and oxygen into the silicon film;
- forming a refractory metal film on the silicon film;
- and
- heating the semiconductor substrate, the first gate dielectric film, the silicon film, and the refractory metal film.
A method for manufacturing a semiconductor device comprising, the semiconductor device comprising:
- a semiconductor substrate;
- a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film;
- the method comprising:
- forming the first gate dielectric film on the semiconductor substrate;
- forming a metal silicide film including silicon and refractory metal on the first gate dielectric film and;
- introducing aluminum into the metal silicide film;
- and
- heating the semiconductor substrate, the first gate dielectric film, and the refractory metal film.
A method for manufacturing a semiconductor device comprising, the semiconductor device comprising:
- a semiconductor substrate;
- a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf and oxygen, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film;
- the method comprising:
- forming the first gate dielectric film on the semiconductor substrate;
- forming a silicon film on the first gate dielectric film;
- introducing aluminum into the silicon film;
- and
- forming a refractory metal on the silicon film;
- and
- heating the semiconductor substrate, the first gate dielectric film, and the refractory metal film.
Dependencies are inferred from the claim text.