Method to improve performance of secondary active components in an esige cmos technology

A method of making a substrate for a CMOS device comprising:

• providing a direct semiconductor bonded (DSB) silicon substrate comprising a first layer having a (100) oriented surface bonded to a second layer having a (100) oriented surface, wherein the first layer and the second layer each has a first direction and a second direction and the first direction of the first layer is approximately aligned with the second direction of the second layer;
• performing amorphization on a selected region of the first layer to form a localized amorphous silicon region extending at least up to an interface of the first layer and the second layer;
• recrystallizing the localized amorphous silicon region across the interface using the second layer as a template, such that the first direction of the first layer in the selected region is approximately aligned with the first direction of the second layer and the second direction of the first layer in the selected region is approximately aligned with the second direction of the second layer.

A method of making a substrate for an embedded silicon germanium (eSiGe) CMOS device comprising:

• providing a direct semiconductor bonded (DSB) silicon substrate comprising a first layer having a (100) oriented surface bonded to a second layer having a (100) oriented surface, wherein the first layer and the second layer each has a first direction and a second direction and the first direction of the first layer is approximately aligned with the second direction of the second layer;
• etching through an etch mask a selected region of the first layer to form a localized recess extending at least up to an interface of the first layer and the second layer;
• epitaxially growing silicon in the localized recess using the second layer as a template, such that the first direction of the first layer in the selected region is approximately aligned with the first direction of the second layer and the second direction of the first layer in the selected region is approximately aligned with the second direction of the second layer.