Semiconductor device and method for manufacturing the same
AssigneeElpida Memory, Inc.
InventorKeizo Kawakita
Life of this patent
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Abstract
The semiconductor device according to the present invention is a Fin-FET that can substantially increase the channel width without unnecessarily elevating the height of the Fin. The Fin-FET has gate electrodes 22 formed on the upper surface, both left and right sides and the bottom surface of channel-forming semiconductor layer 11a formed by processing semiconductor substrate 11 into a fin shape; and a channel region the four surfaces of which are surrounded by gate electrodes 22.
Claims7
A semiconductor device comprising a Fin-structure field effect transistor (Fin-FET),
- wherein the Fin-FET comprises a channel region surrounded by a gate electrode formed on the upper surface, both left and right sides and the bottom surface of a channel-forming semiconductor layer formed by shaping a semiconductor substrate into a fin.
A method for manufacturing a semiconductor device having a fin-structure field effect transistor (Fin-FET), comprising
- (A) etching a semiconductor substrate to form a fin-shaped channel-forming semiconductor layer, and forming trenches for isolating the channel-forming semiconductor layer;
- (B) forming an element isolating insulation film in the trenches for isolating the channel-forming semiconductor layer;
- (C) forming two slit portions facing each other in the channel-forming semiconductor layer;
- (D) forming insulation films on an upper surface of the channel-forming semiconductor layer and in the slit portions;
- (E) removing the insulation films on the bottom surfaces of the slit portions;
- (F) isotropically etching the semiconductor layers exposed on the bottom surfaces of the slit portions to form cavity portions under the slit portions;
- (G) removing at least the remaining insulation films in slit portions, and thereafter forming a gate insulation film on the entire surface of exposed semiconductor layers;
- and
- (H) filling the slit portions and the cavity portions with a gate electrode material and forming a film over the entire surface and processing the film into the shape of a gate electrode.
Dependencies are inferred from the claim text.