Finfet sram with asymmetric gate and method of manufacture thereof

A transistor FinFET (fin Field Effect Transistor) Static Random Access Memory (SRAM) transistor device including FinFET transistors comprising:

• said finFET SRAM including a plurality of transistors formed on an array of fins with each of said transistors including within one of said fins a semiconductor channel region plus a source region and a drain region extending from opposite sides of said channel region;
• and;
• said fins having sidewalls with a gate dielectric layer formed thereon;
• bilateral transistor gate electrode regions extending from said gate dielectric layer and said sidewalls of said fins juxtaposed with said channel regions;
• an asymmetrically doped FinFET transistor having source and drain regions doped with a first type of dopant;
• and
• said asymmetrically doped FinFET transistor including at least one of said bilateral transistor gate electrode regions on one side of at least one of said fins counterdoped with respect to said dopant of said source and drain regions of said asymmetrically doped finFET transistor.

A method of forming a finFET (fin Field Effect Transistor) transistor device including FinFET transistors comprising:

• forming at least one first vertical fin on a substrate having bilateral sidewalls on opposite sides thereof with gate dielectric layers formed covering said bilateral sidewalls;
• forming a first channel region in said fin juxtaposed with a first source region and a first drain region;
• a first set of bilateral doped gate electrodes covering said gate dielectric layers proximate to said first channel region between said first source and drain regions, with the type of doping of the gate electrodes matching the type of doping of said first source and drain regions;
• and
• forming a second channel region in said fin juxtaposed with a second source region and a second drain region;
• a second set of bilateral doped gate electrodes covering said gate dielectric layers proximate to said second channel region between said second source and drain regions, with the type of doping one of second set of bilateral gate electrodes counterdoped with respect to the type of doping of said second source and drain regions.

A method of forming a finFET (fin Field Effect Transistor) Static Random Access Memory (SRAM) transistor device comprising:

• forming said finFET SRAM including a plurality of transistors on an array of fins with each of said transistors including within one of said fins a semiconductor channel region plus a source region and a drain region extending from opposite sides of said channel region;
• forming a gate dielectric layer on sidewalls of said fins;
• forming bilateral transistor gate electrode regions extending from said gate dielectric layer and said sidewalls of said fins juxtaposed with said channel regions;
• forming an asymmetrically doped finFET transistor having source and drain regions doped with a first type of dopant;
• and
• forming said asymmetrically doped finFET transistor including at least one of said bilateral transistor gate electrode regions on one side of at least one of said fins counterdoped with respect to said dopant of said source and drain regions of said asymmetrically doped finFET transistor.