Field Effect Transistors Having Protruded Active Regions and Methods of Fabricating Such Transistors

A field effect transistor comprising:

• a semiconductor substrate;
• an active region in the semiconductor substrate, the active region having a top surface and side surfaces, the active region extending in a first direction;
• a device isolation film that extends along the first direction;
• and
• a gate electrode that covers the top and side surfaces of the active region and extends in a second direction,
• wherein portions of the active region that are covered by the gate electrode are recessed below a top surface of the semiconductor substrate.

An array of field effect transistors, comprising:

• a semiconductor substrate;
• a plurality of active regions that protrude from a surface of the semiconductor substrate and extend in a first direction;
• a plurality of device isolation films that extend along the first direction and separate the field effect transistors from each other;
• and
• a plurality of gate electrodes that each cover a top surface and side surfaces of a respective one of the plurality of protruded active regions, the gate electrodes extending in a second direction,
• wherein a top surface of the portions of each active region that are covered by the gate electrodes is lower than a top surface of the portions of the active region that are between adjacent gate electrodes.