Semiconductor device

A semiconductor device, comprising:

• a first electrode provided on a semiconductor substrate and having a first conductivity;
• a second electrode provided on the semiconductor substrate so as to face the first electrode and having a second conductivity;
• and
• a laminated film formed between the first and second electrodes and consisting of at least two stacked solid electrolytic layers,
• wherein the first electrode includes a metal to be diffused in the solid electrolyte laminated layer to form a low resistance path therein;
• and
• a phase boundary layer provided between each pair of solid electrolyte layers and having mobility lower than that of each of the first and second solid electrolyte layers.

A semiconductor device, comprising:

• a first electrode provided on a semiconductor substrate;
• a second electrode provided on the semiconductor substrate so as to face the first electrode;
• and
• a laminated film formed between the first and second electrodes and consisting of at least two stacked solid electrolyte layers having different components respectively,
• wherein the first electrode includes a metal to be diffused in the solid electrolyte layer to form a low resistance path therein;
• and
• wherein the first electrode consists of at least one element selected from a group consisting of Cu, Ag, Zn, Cd, and Al and the second element consists of at least one element selected from a group consisting of W, Ta, Mo, Nb, Cr, Ni, Ti, and Pt group elements, as well as Ti nitride;
• and
• wherein the solid electrolyte layer is a laminated film consisting of two or more layers having different components respectively, in which one of those layers is an oxide layer composed of at least one element selected from a group consisting of Cu, Ag, Zn, Cd, and Al, as well as at least one element selected from a group consisting of Ta, Mo, Nb, Cr, Ni, Co, Ti, and Pt group elements, and the other of those layers is a layer composed of at least one component selected from a group consisting of O, S, Se, and Te.

A semiconductor device, comprising:

• a first electrode provided on a semiconductor substrate and having first mobility;
• a second electrode provided on the semiconductor substrate so as to face the first electrode and having second mobility;
• and
• a laminated film formed between the first and second electrodes and consisting of at least two stacked solid electrolyte layers,
• wherein the first electrode includes a metal to be diffused in the solid electrolyte layer to form a low resistance path therein;
• wherein the first electrode is made of Cu and the second electrode is made of W or Pt;
• wherein the phase boundary layer is made of Al2O3;
• and
• wherein the solid electrolyte laminated layer is a multilayer film consisting of a chalcogenide layer containing Cu—Ta—O and a chalcogenide layer containing Cu—Ta—S.

A semiconductor device, comprising:

• a first electrode provided on a semiconductor substrate;
• a second electrode provided on the semiconductor substrate so as to face the first electrode;
• and
• a laminated film formed between the first and second electrodes and consisting of at least two stacked solid electrolyte layers having different components respectively,
• wherein the first electrode includes a metal to be diffused in the solid electrolyte layer to form a low resistance path therein;
• wherein the first electrode is made of at least one element selected from a group consisting of Cu, Ag, Zn, Cd, and Al while the second electrode is made of at least one element selected from a group consisting of W, Ta, Mo, Nb, Cr, Ni, Co, Ti, and Pt group elements, as well as Ti nitride;
• wherein the solid electrolyte layer is a multilayer film consisting of two or more layers having different compositions respectively, the multilayer film including an oxide layer composed of at least one element selected from a group consisting of Cu, Ag, Zn, Cd, and Al or at least one element selected from a group consisting of Ta, Mo, Nb, Cr, Ni, Co, Ti, and Pt group elements and O, and another layer composed of at least one component selected from a group consisting of Cu, Ag, Zn, Cd, and Al or at least one element selected from a group consisting of Ta, Mo, Nb, Cr, Ni, Co, Ti, and Pt group elements and at least one element selected from a group consisting of O, S, Se, and Te.