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US 2009/0014769 A1Published application
Suspended-gate mos transistor with non-volatile operation
AssigneeCommissariat a l'Energie Atomique
InventorsMichael Collonge, Maud Vinet, Olivier Thomas
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Abstract
A transistor device with a mobile suspended gate, the device comprising means for piezoelectric actuation of the gate, and a method for producing such a device.
Claims37
A Microelectronic device, including at least one transistor comprising:
- on a substrate, a semiconductor zone with a channel covered with a gate dielectric zone,
- a mobile gate, suspended above the gate dielectric and separated from the gate dielectric by an empty space, which gate is located at an adjustable distance from said gate dielectric zone,
- piezoelectric actuation means, which piezoelectric actuation means are capable of moving the gate with respect to said channel zone.
Method for producing a microelectronic device equipped with at least one suspended mobile gate transistor with piezoelectric actuation, including the steps of:
- a) forming, on a substrate, at least one semiconductor zone in which source, drain and channel zones of a transistor are intended to be formed, and a gate dielectric zone covering said semiconductor zone,
- b) forming at least one sacrificial layer on said gate dielectric zone,
- c) forming a gate for said transistor on said sacrificial layer,
- d) forming, on the gate, a stack including at least one first conductive layer intended to form a first electrode, with at least one piezoelectric material layer resting on said first conductive layer, and at least one second conductive layer on said piezoelectric material layer and intended to form a second electrode, in which said stack is intended for the formation of means for piezoelectric actuation of the gate,
- e) at least partially removing said sacrificial layer on the gate dielectric zone, so as to detach the gate from the gate dielectric.
2 more elements
Dependencies are inferred from the claim text.