Back to results
US 2009/0014758 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsYoichi Nogami, Toshikazu Hirayama
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a SiN first protective insulating film is formed on a semiconductor layer. A T-shaped gate electrode is formed on the semiconductor layer. A SiN second protective insulating film spreads in an umbrella shape from above the T-shaped gate electrode. A hollow region is formed between the two SiN films. The SiN films are coated with a SiN third protective insulating film with the hollow region remaining.
Claims6
A semiconductor device comprising:
- a semiconductor layer,
- a first protective insulating film on said semiconductor layer,
- a T-shaped gate electrode on said semiconductor layer and having a top portion,
- a second protective insulating film spread in an umbrella shape from above said T-shaped gate electrode with respect to said semiconductor layer and defining a hollow region between said first protective insulating film and said second protective insulating film, and
- a third protective insulating film coating said first protective insulating film and said second protective insulating film with said hollow region remaining.
2 more elements
A method for manufacturing a semiconductor device comprising:
- forming a first protective insulating film on a semiconductor layer,
- forming a sacrificial film on said first protective insulating film,
- forming an opening in said first protective insulating film and in said sacrificial film,
- forming a metal film on all exposed surfaces and filling said opening,
- patterning said metal film to form a T-shaped gate electrode on said semiconductor layer,
- forming a second protective insulating film on all exposed surfaces and coating said T-shaped gate electrode,
- selectively removing said second protective insulating film outside a first region around said T-shaped gate electrode,
- selectively removing said sacrificial film to form a hollow region between said first protective insulating film and said second protective insulating film, and
- coating said first protective insulating film and said second protective insulating film with a third protective insulating film with said hollow region remaining.
6 more elements
Dependencies are inferred from the claim text.