III-Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same
OwnerChang-Tae Kim, Keuk Kim +1inventors
InventorsChang-Tae Kim, Keuk Kim, Tae Kyung Yoo
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Abstract
Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.
Claims14
A III-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate which creates lights by recombining an electron and a hole, in which the substrate is provided with protrusions to let the lights generated in the active layer emit to the outside of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.
A method for producing a III-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate which creates lights by recombining an electron and a hole, in which the substrate is provided with protrusions to let the lights generated in the active layer emit to the outside of the light emitting device and the protrusions are formed by the steps of:
- (1) patterning an etching mask formed on the substrate;
- (2) etching the substrate to remain a part of the patterned etching is mask;
- (3) heat-treating the remaining part of the etching mask so that the side wall of the mask is inclined;
- and
- (4) etching the substrate by using a part of heat-treated etching mask as a etching mask.
A method for producing a III-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate which creates lights by recombining an electron and a hole, in which the substrate is provided with protrusions to let the lights generated in the active layer emit to the outside of the light emitting device and the protrusions are formed by the steps of:
- (1) forming a first etching mask on a substrate;
- (2) forming a second etching mask on the first etching mask;
- (3) patterning the second etching mask;
- (4) heat-treating the patterned second etching mask so that the side wall is inclined;
- (5) removing the first etching mask without the patterned second etching mask formed thereon;
- and
- (6) etching the substrate.
A method for producing a III-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate which creates lights by recombining an electron and a hole, in which the substrate is provided with protrusions to let the lights generated in the active layer emit to the outside of the light emitting device and the protrusions are formed by the steps of:
- (1) forming a first etching mask on a substrate;
- (2) forming a second etching mask on the first etching mask;
- (3) patterning the first etching mask and the second etching mask;
- and
- (4) heat-treating the patterned second etching mask so that the side wall is inclined.
Dependencies are inferred from the claim text.