Method of manufacturing high power light-emitting device package and structure thereof

A structure of a high power light-emitting device package, comprising:

• a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;
• an electroplating layer formed on an outer surface of the lead frame;
• a conductive gel layer coated on a surface of the heat-dissipating element;
• at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element;
• an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup;
• a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;
• a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;
• and
• a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire, whereby forming a high power light-emitting device package.

A structure of a high power light-emitting device package, comprising:

• a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;
• an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each;
• an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant;
• a conductive gel layer coated on the bottom of the reflector cup;
• at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element;
• a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;
• a silver epoxy layer formed on a connection of the solder wire and the one top electrodes of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;
• a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire;
• and
• a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package.

A structure of a high power light-emitting device package, comprising:

• a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;
• an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each;
• an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant;
• a conductive gel layer coated on the bottom of the reflector cup;
• at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element;
• a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;
• a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;
• and
• a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire.