Coating method utilizing phosphor containment structure and devices fabricated using same

A light emitting diode (LED) chip wafer, comprising:

• a plurality of LEDs on a substrate wafer, at least some of said LEDs comprising a contact;
• a plurality of containment structures, each of which is associated with a respective one of said plurality of LEDs, each of said containment structures at least partially on its respective one of said LEDs and defining a deposition area on its respective one of said LEDs, excluding said contact;
• and
• a coating in each said deposition area and not on said contact.

An light emitting diode (LED) chip, comprising:

• an LED;
• a contact on said LED;
• containment structure associated with said LED of LEDs, said containment structure at least partially on said LED and defining a deposition area on said LED excluding said contact;
• and
• a coating in said deposition area and on the surface of said LED.

A method for fabricating wafer level LED chips, comprising:

• providing a plurality of LEDs on a substrate;
• forming a contact on at least some of said LEDs;
• depositing a mask layer over at least some of said LEDs having forming a contact, said mask layer covering said contact;
• shaping a containment structure from said mask layer, said containment structure defining a deposition area, said contact outside said deposition area;
• depositing a coating material within said deposition area, said coating material not covering said contact;
• and
• forming an opening through said mask layer to each said contact.