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US 2009/0014729 A1Published application
Semiconductor light emitting device including group III nitride semiconductor
AssigneeRohm Co., Ltd.
InventorsSatoshi Nakagawa, Hiroki Tsujimura
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Abstract
A semiconductor light emitting device comprises: a substrate; a semiconductor stack formed on one of surfaces of the substrate, the semiconductor stack including an active layer composed of a group III nitride semiconductor having a substantially nonpolar or substantially semipolar plane as a main surface; a first electrode formed in a part of a first electrode surface which is the other surface of the substrate; and a second electrode formed on a second electrode surface opposite to the first electrode surface across the substrate and semiconductor stack.
Claims15
A semiconductor light emitting device comprising:
- a substrate;
- a semiconductor stack formed on one of surfaces of the substrate and including an active layer composed of a group III nitride semiconductor having a main surface which is a substantially nonpolar plane or substantially semipolar plane;
- a first electrode formed in a part of a first electrode surface which is the other surface of the substrate;
- and
- a second electrode formed on a second electrode surface opposite to the first electrode surface across the substrate and semiconductor stack.
2 more elements
Dependencies are inferred from the claim text.