Method of treating interface defects in a substrate
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsCarlos MAZURE, Ian Cayrefourcq, Konstantin Bourdelle
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Abstract
The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.
Claims19
A method of treating a structure produced from semiconductor materials, the structure comprising first and second substrates defining a common interface that includes crystal defects adjacent thereto, wherein the method comprises:
- forming a disorganized layer that includes the interface and has a crystal lattice at least a part of which is disorganized;
- and
- reorganizing the crystal lattice of the disorganized layer in order to force the defects back into the substrate adjacent thereto.
A method of obtaining increased bonding in a semiconductor structure that is fabricated by bonding first and second substrates together at a common interface, which comprises, after bonding, applying a heat treatment carried out at a temperature between 500 and 1000° C. for 20 minutes to 2 hours in order to reduce crystal defects at the interface and obtain increased bonding between the substrates.
A semiconductor material structure comprising first and second substrates defining a common interface, a disorganized layer including at least a part of the interface and having a crystal lattice, at least a part of which is disorganized.
Dependencies are inferred from the claim text.