Nitride semiconductor light emitting device and fabrication method thereof
AssigneeSamsung LED Co., Ltd.
InventorsSang Won KANG, Yong Chun Kim, Dong Hyun Cho, Jeong Tak Oh, Dong Joon Kim
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Abstract
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
Claims20
A nitride semiconductor light emitting device comprising:
- a substrate;
- and
- a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.
A nitride semiconductor light emitting device comprising:
- a substrate;
- an n-type semiconductor layer formed on the substrate;
- an active layer formed on the n-type semiconductor layer;
- a p-type semiconductor layer formed on the active layer;
- a transparent electrode formed on the p-type semiconductor layer;
- an n-type electrode formed on an exposed portion of the n-type semiconductor layer;
- and
- a p-type bonding electrode formed on the transparent electrode,
- wherein at least one of the n-type semiconductor layer and the p-type semiconductor layer further includes a super lattice layer or a multi-stacked layer;
- and
- an V-shaped distortion structure is formed at least one portion of the active layer and the p-type semiconductor layer with reference to the n-type semiconductor layer.
A nitride semiconductor light emitting device comprising:
- a light emitting structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer, wherein V-shaped distortion structures are formed on the n-type nitride semiconductor layer, the active layer and the p-type nitride semiconductor layer.
A method for forming a nitride semiconductor light emitting device comprising the steps of:
- preparing a substrate;
- forming an n-type semiconductor layer with a V-shaped distortion structure on the substrate;
- forming an active layer on the n-type semiconductor layer;
- and
- forming a p-type semiconductor layer on the active layer.
Dependencies are inferred from the claim text.