Phase change memory device and method for fabricating the same
AssigneesIndustrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
InventorsHong-Hui Hsu, Frederick T. Chen, Ming-Jer Kao
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Abstract
A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer.
Claims19
A phase change memory device, comprising:
- a substrate;
- a first conductive layer on the substrate;
- a heating electrode on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT);
- a phase change material layer on the heating electrode, covering the heating electrode;
- and
- a second conductive layer on the phase change material layer, and electrically connected to the phase change material layer.
A method of fabricating a phase change memory device, comprising:
- providing a substrate having a first conductive layer thereon;
- forming a heating electrode on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT);
- forming a phase change material layer on the heating electrode, covering the heating electrode;
- and
- forming a second conductive layer on the phase change material layer, and electrically connected to the phase change material layer.
Dependencies are inferred from the claim text.