External cathode ion source

An ion source for use with an ion implant device, the ion source comprising:

• (a) an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along a predetermined axis defining an ion beam axis;
• (b) a source of electrons external to the chamber and an aligned beam receptor configured relative to and outside said ionization chamber to cause an electron beam to be directed across the ionization volume of said ionization chamber in a direction generally perpendicular to said ion beam axis for ionizing gas in the ionization chamber;
• and
• (c) a gas source in fluid communication with said ionization chamber for supplying a cluster molecule feed gas or a monatomic feed gas;
• and
• wherein the source of electrons ionizes the cluster feed gas by direct electron impact ionization and ionizes the monatomic feed gas by arc discharge.

An ion source for use with an ion implant device, the ion source comprising:

• a. a chamber having an extraction aperture and defining an opening through which electrons may flow into the chamber;
• b. a gas source providing gas into the chamber for ionization;
• c. a cathode disposed outside the chamber and cooperating therewith;
• and
• d. a voltage supply for biasing the cathode with respect to the chamber such that electrons from the cathode flow toward the chamber and are directed into the chamber through the opening to ionize the gas.

An ion source emitter comprising:

• a. a chamber having a source of gas, an aperture and an opening to permit electrons to enter the chamber;
• b. a filament disposed outside the chamber;
• and
• c. a voltage supply for biasing the filament with respect to the chamber
• wherein the filament emits electrons into the chamber.

An ion source for use with an ion implant device, the ion source comprising:

• (a) an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along a predetermined axis defining an ion beam axis and an entrance port, d3, for;
• (b) a source of electrons external to the chamber and an aligned beam receptor configured relative to and outside said ionization chamber to cause an electron beam to be directed across the ionization volume of said ionization chamber in a direction generally perpendicular to said ion beam axis for ionizing gas in the ionization chamber and disposed at a distance, d1, from the chamber;
• and
• (c) a gas source in fluid communication with said ionization chamber for supplying a cluster molecule feed gas or a monatomic feed gas;
• wherein d1 is less than d3.

An ion source for use with an ion implant device, the ion source comprising:

• (a) an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along a predetermined axis defining an ion beam axis;
• (b) a source of electrons external to the chamber and an aligned beam receptor configured relative to and outside said ionization chamber to cause an electron beam to be directed across the ionization volume of said ionization chamber in a direction generally perpendicular to said ion beam axis for ionizing gas in the ionization chamber, disposed at a distance, d1, from the chamber, wherein the source of electrons has a characteristic dimension, d2;
• and
• (c) a gas source in fluid communication with said ionization chamber for supplying a cluster molecule feed gas or a monatomic feed gas;
• wherein d1 is less than d2.

An ion source for use with an ion implant device, the ion source comprising:

• (a) an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along a predetermined axis defining an ion beam axis;
• (b) a source of electrons external to the chamber and an aligned beam receptor configured relative to and outside said ionization chamber to cause an electron beam to be directed across the ionization volume of said ionization chamber in a direction generally perpendicular to said ion beam axis for ionizing gas in the ionization chamber;
• (c) a gas source in fluid communication with said ionization chamber for supplying a cluster molecule feed gas or a monatomic feed gas;
• (d) pressure barrier enclosing a portion of the source of electrons;
• (e) a vacuum pump to modify the gas pressure proximate to the source of electrons.

An ion source for use with an ion implant device, the ion source comprising:

• an ionization chamber having an electron entrance aperture;
• a source of feed gas in fluid communication with said ionization chamber;
• and
• an electron emitter formed from a cathode disposed outside said ionization chamber at a distance d from said ionization chamber, wherein said distance d1 is selected to cause a plasma to be generated.