US 2009/0014663 A1 · CHARGED-PARTICLE BEAM WRITING METHOD

Abstract

The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern. A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the Positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.

Claims9

Dependent claims

A charged-particle beam writing method for deflecting a charged-particle beam using a main deflector and a sub deflector disposed on an optical path of the charged-particle beam and writing a predetermined pattern onto a sample located on a stage, comprising the steps of:

determining positional displacement amounts in the neighborhood of the center of a main deflection area of the charged-particle beam;
determining correction values from a plurality of said positional displacement amounts;
and
correcting a position to be irradiated with the charged-particle beam using the correction values.

1 more element

Dependencies are inferred from the claim text.

Charged-particle beam writing method

Life of this patent

Charged-particle beam writing method

Life of this patent

Abstract

Claims9