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US 2009/0014409 A1Published application
Endpoint detection for photomask etching
AssigneeApplied Materials, Inc.
InventorMichael Grimbergen
Life of this patent
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Abstract
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
Claims20
A method for processing a substrate, comprising:
- etching a patterned substrate disposed on a substrate support in a plasma etch chamber;
- detecting a first signal reflected from the substrate during etching, the first signal collected through a first window of the substrate support;
- detecting a second signal transmitted through the substrate during etching, the second signal collected through a second window of the substrate support, that second window spatially separated from the first window;
- and
- determining an endpoint of the etch process using the first and second signals.
2 more elements
A method for processing a substrate, comprising:
- etching a photomask reticle disposed on a substrate support in a plasma etch chamber;
- obtaining a first signal indicative of light collected through a first window of the substrate support, the first window disposed below a center of the photomask reticle;
- obtaining a second signal indicative of light collected through a second window of the substrate support, the second window disposed below a first edge of the photomask reticle;
- obtaining OES information collected through a sidewall of the etch chamber;
- and
- determining a parameter of the etching a photomask reticle using the OES information and at least one of the obtained signals.
3 more elements
Dependencies are inferred from the claim text.