Single crystal growing method
AssigneesNGK Insulators, Ltd., Osaka University, Toyoda Gosei Co., Ltd.
InventorsMakoto Iwai, Takanao Shimodaira, Shuhei Higashihara, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Shiro Yamasaki, Koji Hirata
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Abstract
In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.
Claims22
A method of growing a single crystal by melting nitrogen in a melted raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, while the vessel is oscillated and the melted raw material is contacted with an agitation medium, at least a surface of said agitation medium comprising a material unreactive with the melted raw material.
A method of growing a single crystal by melting nitrogen in a melted raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, while the melted raw material is contacted with an agitation medium and the vessel is rotated upon itself around an axis of rotation inclined with respect to the vertical line, at least a surface of the agitation medium comprises a material unreactive with the melted raw material.
Dependencies are inferred from the claim text.