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US 2008/0293255 A1Published application
Radical oxidation process for fabricating a nonvolatile charge trap memory device
AssigneeCypress Semiconductor Corporation
InventorKrishnaswamy Ramkumar
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Abstract
A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed Thereon. A portion of the charge-trapping layer is then oxidized to form a blocking Dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.
Claims20
A method of fabricating a nonvolatile charge trap memory device, comprising:
- providing a substrate having a charge-trapping layer disposed thereon;
- and
- oxidizing, by exposing the charge-trapping layer to a radical oxidation process, a portion of the charge-trapping layer to form a blocking dielectric layer above the charge-trapping layer.
A method of fabricating a nonvolatile charge trap memory device, comprising:
- providing a substrate in a process chamber;
- subjecting, in the process chamber, the substrate to a first radical oxidation process to form a first dielectric layer;
- subjecting, in the process chamber, the substrate to a deposition process to form a charge-trapping layer above the first dielectric layer;
- and
- subjecting, in the process chamber, the substrate to a second radical oxidation process to form a second dielectric layer above the charge-trapping layer by oxidizing a portion of the charge-trapping layer.
2 more elements
A radical oxidation method, comprising:
- providing a substrate in a process chamber;
- mixing, in the process chamber, hydrogen gas and oxygen gas without subjecting the hydrogen gas and oxygen gas to a combustion process;
- and
- oxidizing, in the process chamber, a portion of the substrate with radicals generated from the mixing of the hydrogen gas and oxygen gas.
1 more element
Dependencies are inferred from the claim text.