Single-wafer process for fabricating a nonvolatile charge trap memory device
AssigneeCypress Semiconductor Corporation
InventorsKrishnaswamy Ramkumar, Sagy Levy
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Abstract
A method for fabricating a nonvolatile charge trap memory device is described. The method includes first forming a tunnel dielectric layer on a substrate in a first process chamber of a single-wafer cluster tool. A charge-trapping layer is then formed on the tunnel dielectric layer in a second process chamber of the single-wafer cluster tool. A top dielectric layer is then formed on the charge-trapping layer in the second or in a third process chamber of the single-wafer cluster tool.
Claims20
A method of fabricating a nonvolatile charge trap memory device, comprising:
- forming, in a first process chamber of a single-wafer cluster tool, a tunnel dielectric layer on a substrate;
- forming, in a second process chamber of the single-wafer cluster tool, a charge-trapping layer on the tunnel dielectric layer;
- and
- forming, in a third process chamber of the single-wafer cluster tool, a top dielectric layer on the charge-trapping layer.
A method of fabricating a nonvolatile charge trap memory device, comprising:
- forming, in a first process chamber of a single-wafer cluster tool, a tunnel dielectric layer on a substrate;
- forming, in a second process chamber of the single-wafer cluster tool, a charge-trapping layer on the tunnel dielectric layer;
- and
- forming, in the second process chamber of the single-wafer cluster tool, a top dielectric layer on the charge-trapping layer.
A method of fabricating a nonvolatile charge trap memory device, comprising:
- forming, in a first process chamber of a single-wafer cluster tool, a tunnel dielectric layer on a substrate;
- forming a charge-trapping layer on the tunnel dielectric layer, wherein forming the charge-trapping layer comprises:
- depositing, in a second process chamber of the single-wafer cluster tool, an oxygen-rich oxy-nitride film by a first composition of gases;
- annealing the oxygen-rich oxy-nitride film;
- and
- depositing, in the second process chamber, a silicon-rich oxy-nitride film by a second composition of gases;
- and
- forming, in a third process chamber of the single-wafer cluster tool, a top dielectric layer on the charge-trapping layer.
Dependencies are inferred from the claim text.