Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorsAkira Furuya, Nobuyuki Otsuka, Hiroshi Okamura, Shinichi Ogawa
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Abstract
An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.
Claims9
A method of manufacturing a semiconductor device comprising:
- forming a first layer made of a material containing silicon on a base substance;
- forming a second layer containing metal and nitrogen on said first layer;
- and
- exposing said second layer to active species obtained from plasma in an atmosphere including reducing gas.
Dependencies are inferred from the claim text.