Semiconductor device and manufacturing method thereof
AssigneeOki Electric Industry Co., Ltd.
InventorKazuhide Abe
Life of this patent
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Abstract
A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.
Claims16
A method of manufacturing a semiconductor device, comprising:
- preparing a semiconductor substrate;
- forming a first insulating film on a surface of the semiconductor substrate;
- forming a first trench in the first insulating film, wherein the first trench exposes an inner surface of the first insulating film;
- forming a first barrier film on the inner surface of the first insulating film except a top peripheral region of the first trench;
- forming a first conductive film including copper on the first barrier film so that an upper surface of the first barrier film is lower than an upper surface of the first conductive film and the first insulating film, wherein a top peripheral region of the first conductive film is exposed from the first barrier film;
- and
- forming a covering film on the upper surface and the top peripheral region of the first conductive film and the upper surface of the first barrier film.
A method of manufacturing a semiconductor device, comprising:
- preparing a semiconductor substrate;
- forming a first insulating film on a surface of the semiconductor substrate;
- forming a plurality of first trenches in the first insulating film, wherein the first trenches exposes inner surfaces of the first insulating films;
- forming a plurality of first barrier films on the inner surfaces of the first insulating films except top peripheral regions of the first trenches;
- forming a plurality of first conductive films including copper on the first barrier films so that upper surfaces of the first barrier films are lower than upper surfaces of the first conductive films and the insulating film and so that top peripheral regions of the first conductive film are exposed from the first barrier films;
- and
- forming covering films on the upper surfaces and top peripheral regions of the first conductive films and upper surfaces of the first barrier films wherein each of the covering films is respectively formed on each of the first conductive films so that the covering films are apart from each other.
Dependencies are inferred from the claim text.