Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment
AssigneeSeiko Epson Corporation
InventorTetsuya Otsuki
Life of this patent
Estimating the term…
Abstract
A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.
Claims18
A method of manufacturing a semiconductor device comprising:
- forming a first conductive layer over a semiconductor wafer on which a plurality of integrated circuits are formed so that the first conductive layer is electrically connected with electrodes of the semiconductor wafer;
- forming an insulating layer so that at least a part of the insulating layer is disposed on the first conductive layer;
- forming a second conductive layer so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer;
- and
- cutting the semiconductor wafer,
- wherein each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material, and
- wherein the insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.
Dependencies are inferred from the claim text.