Semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorsMasamitsu Ikumo, Hiroyuki Yoda, Eiji Watanabe
Life of this patent
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Abstract
A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.
Claims8
A manufacturing method of a semiconductor device,
- the semiconductor device including
- electrode layers provided at designated positions of a semiconductor substrate;
- an organic insulation protection film continuously covering a gap between the neighboring electrode layers so that substantially centers of the electrode layers are exposed;
- and
- projection electrodes for outside connection, the projection electrodes being connected to the electrode layers;
- the manufacturing method comprising the step of:
- etching a surface of the organic insulation protection film by a dry etching process after the projection electrode is formed on the electrode layer.
Dependencies are inferred from the claim text.