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US 2008/0293233 A1Published application
Post last wiring level inductor using patterned plate process
AssigneeInternational Business Machines Corporation
InventorsAnil Kumar Chinthakindi, Douglas Duane Coolbaugh, John Edward Florkey, Jeffrey Peter Gambino, Zhong-Xiang He, Anthony Kendall Stamper, Kunal Vaed
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Abstract
A method of a semiconductor device. A substrate is provided. At least one metal wiring level is within the substrate. An insulative layer is deposited on a surface of the substrate. An inductor is formed within the insulative layer using a patterned plate process. A wire bond pad is formed within the insulative layer, wherein at least a portion of the wire bond pad is substantially co-planar with the inductor.
Claims6
A method of forming a semiconductor device, comprising:
- providing a substrate having at least one metal wiring level within the substrate;
- depositing an insulative layer on a surface of the substrate;
- forming an inductor within the insulative layer using a patterned plate process;
- and
- forming a wire bond pad within the insulative layer, wherein at least a portion of the wire bond pad is substantially co-planar with the inductor.
2 more elements
Dependencies are inferred from the claim text.