Method for forming electrode for Group-III nitride compound semiconductor light-emitting devices
AssigneeToyoda Gosei Co., Ltd.
InventorsKoichi Goshonoo, Miki Moriyama
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Abstract
A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.
Claims14
A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices, comprising:
- a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer;
- and
- a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.
Dependencies are inferred from the claim text.