Method for forming gate electrode of semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorEun Sang CHO
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Abstract
Provided is a method for forming a gate electrode of a semiconductor device which can form a gate electrode having a fine line width. Disclosed method steps include forming a gate oxide film, a polysilicon film for a gate electrode, and a first sacrificial layer on the entire surface of a semiconductor substrate and then forming an opening within the first sacrificial layer. The effective width of the hole is reduced, and an ion implantation layer is formed on the top surface of the polysilicon film in the region exposed through the hole. A gate electrode is formed under the ion implantation layer by using the ion implantation layer as a mask.
Claims15
A method for forming a gate electrode of a semiconductor device, comprising:
- forming a gate oxide film, a gate electrode film, and a first sacrificial layer on the surface of a semiconductor substrate;
- forming an opening within the first sacrificial layer;
- reducing the effective width of the opening;
- forming an ion implantation layer on the top surface of the gate electrode film in a region exposed through the opening having the reduced width;
- removing the first sacrificial layer;
- forming a gate electrode under the ion implantation layer;
- and
- removing the ion implantation layer.
A method for forming a gate electrode of a semiconductor device, comprising:
- forming a gate oxide film, a polysilicon film, and a first sacrificial layer on the surface of a semiconductor substrate;
- forming a substantially vertical opening within the first sacrificial layer;
- forming a spacer on a sidewall defined by the opening;
- forming an ion implantation layer on the top surface of the polysilicon film in a region exposed through the opening, the exposed region having been narrowed by the spacer;
- removing the first sacrificial layer;
- forming a gate electrode under the ion implantation layer by using the ion implantation layer as a mask;
- and
- removing the ion implantation layer.
Dependencies are inferred from the claim text.