Method for Manufacturing Strained Silicon
AssigneeTexas Instruments Incorporated
InventorsRichard L. Knipe, Grady L. Endsley
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Abstract
In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.
Claims15
1-5. (canceled)
A method for manufacturing strained silicon, comprising:
- inducing a curvature in a silicon wafer;
- depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature;
- and
- releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.
A method for manufacturing strained silicon, comprising:
- inducing a stress into a silicon wafer;
- depositing an epitaxial layer of silicon upon an upper surface of the silicon wafer while the silicon wafer is under the induced stress;
- and
- removing the induced stress from the silicon wafer, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.
19-20. (canceled)
Dependencies are inferred from the claim text.