Shallow junction formation and high dopant activation rate of MOS devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Feng Nieh, Keh-Chiang Ku, Nai-Han Cheng, Chi-Chun Chen, Li-Te S. Lin
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Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; implanting carbon into the semiconductor substrate; and implanting an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity comprises more than one phosphorous atom. The n-type impurity may include phosphorous dimer or phosphorous tetramer.
Claims18
A method for forming a semiconductor structure, the method comprising:
- providing a semiconductor substrate;
- forming a gate stack over the semiconductor substrate;
- implanting carbon into the semiconductor substrate;
- and
- implanting an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity comprises more than one phosphorous atom.
A method for forming a semiconductor structure, the method comprising:
- providing a semiconductor substrate;
- forming a gate dielectric layer over the semiconductor substrate;
- forming a gate electrode layer over the gate dielectric layer;
- performing a pre-gate implantation to the gate electrode layer;
- patterning the gate dielectric layer and the gate electrode layer to form a gate stack;
- implanting indium into the semiconductor substrate to form a pocket region, wherein the method is free from a pre-amorphization implantation step;
- co-implanting carbon and an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity is selected from the group consisting essentially of phosphorous dimer, phosphorous tetramer, and combinations thereof;
- forming a gate spacer on a sidewall of the gate stack;
- and
- forming a deep source/drain region.
Dependencies are inferred from the claim text.