Nonvolatile semiconductor memory and a fabrication method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsAkira Goda, Hiroyuki Nitta
Life of this patent
Estimating the term…
Abstract
A nonvolatile semiconductor memory includes: a device region and a device isolating region, which have a pattern with a striped form that extends in a first direction, and are alternately and sequentially disposed at a first pitch in a second direction that is perpendicular to the first direction; and a contact made of a first conductive material, which is connected to the device region and disposed at the first pitch in the second direction. On a cross section of the second direction, the bottom width of the contact is longer than the top width of the contact, and the bottom width is longer than the width of the device region.
Claims9
A fabrication method of a nonvolatile semiconductor memory comprising:
- forming a device isolating region, a memory cell transistor, select transistors, and a peripheral transistor;
- forming a source/drain diffusion layer using a gate electrode of the memory cell transistor as a mask;
- depositing a sidewall insulator film of an oxide film;
- subjecting the sidewall insulator film to etching so that the sidewall insulator film remains between a sidewall of the select transistors and adjacent memory cell transistor;
- depositing a barrier insulator film on the surface of the semiconductor substrate;
- and
- filling the area between select transistors by depositing a first interlayer film.
Dependencies are inferred from the claim text.