Semiconductor device with stressors and methods thereof
OwnerStefan Zollner, Veeraraghavan Dhandapani +1inventors
InventorsStefan Zollner, Veeraraghavan Dhandapani, Paul A. Grudowski
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Abstract
A semiconductor device is formed in a semiconductor layer. A gate dielectric is formed over a top surface of the semiconductor layer. A gate stack is over the gate dielectric. A sidewall spacer is formed around the gate stack. Using the sidewall spacer as a mask, an implant is performed to form deep source/drain regions in the semiconductor layer. Silicon carbon regions are formed on the deep source/drain regions and a top surface of the gate stack. The silicon carbon regions are silicided with nickel.
Claims20
A method of forming a semiconductor device in and over a semiconductor layer, comprising:
- forming a gate dielectric over a top surface of the semiconductor layer;
- forming a gate stack over the gate dielectric;
- forming a sidewall spacer around the gate stack;
- implanting using the sidewall spacer as a mask to form deep source/drain regions in the semiconductor layer;
- forming silicon carbon regions that are crystalline on the deep source/drain regions and a top surface of the gate stack;
- and
- using nickel to convert the silicon carbon regions to silicide regions.
A method of forming a semiconductor device in and over a silicon layer, comprising:
- forming a gate stack over the silicon layer having a polysilicon top surface;
- forming deep source/drains in the silicon layer on opposing sides of the gate stack;
- forming source/drain silicon carbon regions and a gate silicon carbon region, wherein the source/drain silicon carbon regions have an exposed top surface and are in direct contact with the deep source/drain regions and the gate silicon carbon regions have an exposed to surface and are in direct contact with the gate stack;
- and
- siliciding the source/drain and gate silicon carbon regions with nickel.
A semiconductor device, comprising:
- a silicon layer;
- a gate stack over the silicon layer;
- a sidewall spacer around the gate stack;
- a deep source/drain region in the silicon layer on a side of the gate stack and substantially aligned to an edge of the sidewall spacer;
- a silicide region directly on the deep source/drain region, wherein the silicide region comprises nickel, carbon and silicon.
Dependencies are inferred from the claim text.