Phase change memory and manufacturing method thereof

A manufacturing method of a phase change memory comprising:

• forming a first electrode;
• forming an electrically conductive layer on the first electrode;
• forming a transfer layer on the electrically conductive layer;
• forming, on the transfer layer, a block copolymer layer having an ordered structure where first polymer phases and second polymer phases are approximately regularly arranged;
• selectively removing the first polymer phases to form a plurality of recesses on a surface of the block polymer layer;
• forming a pattern corresponding to the ordered structure of the block copolymer layer by utilizing the plurality of recesses as masks to etch the block copolymer layer and the transfer layer;
• forming a plurality of electrically conductive bodies corresponding to the ordered structure of the block copolymer layer by utilizing the transfer layer as a mask to perform etching process;
• forming a high resistance film with a resistance higher than the electrically conductive body among the plurality of electrically conductive bodies;
• forming a phase change material layer which can phase-change between a first phase state having a first specific resistance and a second phase state having a second specific resistance different from the first specific resistance on the plurality of electrically conductive bodies and the high resistance film;
• and
• forming a second electrode.