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US 2008/0293181 A1Published application
Method for manufacturing image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorsSang-Wook Ryu, Byoung-Saek Tak
Life of this patent
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Abstract
A method for manufacturing an image sensor including forming a microlens array over a color filter array, forming a capping layer over the semiconductor substrate including the microlens array, forming a pad mask over the capping layer, and then exposing a pad in an interlayer dielectric layer.
Claims20
A method for manufacturing an image sensor comprising:
- forming an interlayer dielectric layer including a pad over a semiconductor substrate;
- forming a color filter array directly over the interlayer dielectric layer;
- forming a microlens array over the color filter array;
- forming a capping layer over the semiconductor substrate including the microlens array;
- forming a pad mask over the capping layer;
- and then exposing the pad.
3 more elements
A method of manufacturing an image sensor comprising:
- forming an interlayer dielectric layer including a pad over a semiconductor substrate;
- forming a passivation layer over the interlayer dielectric layer;
- forming a color filter array over the passivation layer;
- forming a planarization layer over the color filter array;
- forming a microlens array over the planarization layer including a first dielectric layer over the planarization layer and a second dielectric layer formed over the first dielectric layer;
- forming an organic layer over the semiconductor substrate including the microlens array;
- forming a pad mask over the organic layer, the pad mask including a first pad hole exposing an upper surface portion of the organic layer which spatially corresponds to the pad;
- exposing an uppermost surface of the pad by etching the organic layer, the second dielectric layer, the first dielectric layer, and the passivation layer using the pad mask as an etch mask;
- and then
- simultaneously removing the organic layer and the pad mask.
7 more elements
A method of manufacturing an image sensor comprising:
- forming an interlayer dielectric layer including a pad over a semiconductor substrate;
- forming a passivation layer over the interlayer dielectric layer;
- forming a color filter array over the passivation layer;
- forming a planarization layer over the color filter array;
- forming a microlens array over the planarization layer including a plurality of contacting microlenses having a zero gap therebetween, the microlens array further including a first dielectric layer over the planarization layer and a second dielectric layer formed over the first dielectric layer;
- forming a metal layer over the semiconductor substrate including the microlens array;
- forming a pad mask over the metal layer, the pad mask including a first pad hole exposing an upper surface portion of the metal layer which spatially corresponds to the pad;
- exposing an uppermost surface of the pad by etching the metal layer, the second dielectric layer, the first dielectric layer, and the passivation layer using the pad mask as an etch mask;
- removing the pad mask;
- and then
- removing the metal layer.
8 more elements
Dependencies are inferred from the claim text.