Method for manufacturing light emitting diode devices

A method for manufacturing LED devices to increase the lighting efficiencies of the said LED devices, whereof it includes the following steps:

• A LED wafer has a substrate which includes a LED expitaxial layer;
• The said LED wafer is cut to a plurality of LED sticks;
• The said plurality of LED sticks are fixed by a fixture, whereof each space layer is bonded between every two LED sticks, and the height of the space layer shall be lower than the height of the said LED sticker;
• and
• The surface and exposed sides of the said LED stick are anti-reflection treated.

A method for manufacturing LED devices to increase the directivity of the said LED device, whereof it includes the following steps:

• A LED wafer has a substrate which includes a LED epitaxial layer;
• The said LED wafer is cut to a plurality of LED sticks;
• An optical resistance layer is formed on the surfaces of the plurality of LED sticks;
• The said plurality of LED sticks are fixed by a fixture, each space layer is bonded between every two LED sticks, whereof the height of the space layer is lower than the height of the LED stick;
• A high reflective layer is formed on the whole row of plurality of LED sticks and plurality of space layers;
• and
• The said optical resistance layer and the said high reflective layer on the surface of the plurality of LED sticks are removed,
• Thereby, the high reflective layer is formed on the exposed sides of the said plurality of LED sticks.