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US 2008/0293171 A1Published application
LIGHT EMITTING DIODES (LEDs) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING
AssigneeSemiLEDs Corporation
InventorsChuong Anh Tran, Trung Tri Doan
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Abstract
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
Claims7
A method of fabricating a light-emitting diode (LED) device having a roughened surface for scattering light, the method comprising:
- depositing an n-doped layer above a carrier substrate;
- depositing an active layer for emitting light above the n-doped layer;
- depositing a p-doped layer above the active layer;
- forming a conductive substrate above the p-doped layer;
- removing the carrier substrate to expose the n-doped layer;
- immersing a surface of the n-doped layer in an electrolytic solution;
- applying an electrical bias to the conductive substrate;
- and
- illuminating the surface of the n-doped layer such that photo-electrochemical (PEC) oxidation and etching occurs to form the roughened surface of the LED device on the n-doped layer.
6 more elements
Dependencies are inferred from the claim text.