US 2008/0290490 A1Published application

Semiconductor device and method for manufacturing the same

AssigneeDenso Corporation

InventorsTetsuo Fujii, Kazuhiko Sugiura

Life of this patent

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Abstract

A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.

Claims35

Dependent claims

A semiconductor device comprising:

a first substrate made of semiconductor and having a plurality of first regions, wherein the first regions are insulated from each other and disposed in a surface portion of the first substrate, and wherein each first region is a semiconductor region;
and
a second substrate having electric conductivity and having a plurality of second regions and a plurality of insulation trenches, wherein each insulation trench penetrates the second substrate so that the second regions are insulated from each other, and wherein each second region is a conductive region, wherein
the first substrate provides a base substrate, and the second substrate provides a cap substrate,
the second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate, and
the second regions include an extraction conductive region, which is coupled with a corresponding first region.

3 more elements

A method for manufacturing a semiconductor device comprising:

preparing a first substrate made of semiconductor, wherein the first substrate includes a plurality of first regions, which are insulated from each other and disposed in a surface portion of the first substrate, and wherein each first region is a semiconductor region;
preparing a second substrate having electric conductivity and including a plurality of second regions and a plurality of insulation trenches, wherein each insulation trench penetrates the second substrate so that the second regions are insulated from each other, and wherein each second region is a conductive region;
bonding the second substrate to the first substrate so that a sealed space is formed between a predetermined surface region of the first substrate and the second substrate;
and
electrically coupling one of the second regions and a corresponding one of the first regions so that the one of the second regions provides an extraction conductive region, wherein
the first substrate provides a base substrate, and the second substrate provides a cap substrate.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/068,771Filed 12 Feb 2008
Priority: JP 2007-4261922 Feb 2007
Published: 27 Nov 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

B81B 7/007
Packages or encapsulation: interconnections between the MEMS and external electrical signals
H10W 20/023
Of interconnections within wafers or substrates: the interconnections being through-semiconductor vias
H10W 20/20
Interconnections in chips, wafers or substrates: interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
H10W 20/217
Through-semiconductor vias, e.g. TSVs: comprising ring-shaped isolation structures outside of the via holes